Publications This material may be protected by copyright law (Title 17 U.S. Code). For other than Fair Use (as described in section 107 of the code) the user should contact the publisher for permission to use the material. 91. S. Krishnamurthy, M. A. Berding, H. Robinson, and A. Sher, “ Tunneling in LWIR HgCdTe photodiodes”, (Submitted to Journal of Electronic Materials, 2005) 90. S. Krishnamurthy, M. A. Berding, H. Robinson, and A. Sher, “ Tunneling in LWIR HgCdTe photodiodes”, (Submitted to Journal of Electronic Materials, 2005) 88. R. Malhotra, D. L. Huestis, M. Berding, S. Krishnamurthy, and A. Bhown “Chapter 9. Self-Assembled Nanoporous Materials for CO2 Capture. Part 1. Theoretical Considerations.” in “Carbon Dioxide Capture and Storage in Deep Geologic Formations, Volume 1 – Capture and Separation of Carbon Dioxide From Combustion Sources”, D. C. Thomas and S. M. Benson, Eds., (Elsevier, London, 2005). 87. Z. G. Yu, M. A. Berding, and S. Krishnamurthy, “Spin drift, spin precession, and magnetoresistance of noncollinear magnet-polymer-magnet structures,” Phys. Rev. B 71, 060408 (R) (2005). 85. S. Krishnamurthy, M.A. Berding, Zhi Gang Yu, C. Swartz, T. Myers, D. D. Edwall, R. DeWames, “Model for minority carrier lifetimes in doped HgCdTe”, J. Electron. Mater. 34, 873 (2005). 79. H. G. Robinson, M. A. Berding, W. J. Hamilton, T. DeLyon, W. B. Johnson, and B. J. Walker, “Enhanced diffusion and interdiffusion in HgCdTe from Fermi-level effects,” J. Electron. Mater. 29, 657 (2000). 78. M. A. Berding, M. van Schilfgaarde, and A. Sher, “Thermodynamic and electronic properties of GaN and related alloys,” in GaN and Related Materials II, Ed. S. J. Pearton (Gordon and Breach, The Netherlands 2000). 76. M. A. Berding, “Native defects in CdTe,” Phys. Rev. B 60, 8943 (1999). 74. M. J. Antonell, C. R. Abernathy, W. A. Acree, M. A. Berding and A. Sher, "Synthesis and characterization of In-Tl-Sb compounds grown by molecular beam epitaxy," J. Vac. Sci. and Technol. A 17, 338 (1999). 72. M. A. Berding, “Annealing conditions for intrinsic CdTe,” Appl. Phys. Lett. 74, 552 (1999). 71. A. Sher, M. van Schilfgaarde, M. A. Berding, S. Krishnamurthy, and A.-B. Chen, “Computational materials science, an increasingly reliable engineering tool: Anomalous nitride band structures and device consequences,” MRS Internet J. Nitride Semiocond. Res. 4S1, G5.1 (1999). 70. A. Sher, M. van Schilfgaarde, M. A. Berding, “Computational materials science, an increasingly reliable engineering tool; Example, phase diagrams of nitride alloys,” 194th meeting of the Electrochemical Society, Boston, Mass (1999). 69. M. A. Berding and A. Sher, “Electronic quasichemical formalism: Application to arsenic deactivation in silicon,” Phys. Rev. B 58, 3853 (1998). 68. A. C. Chen, M. Zandian, D. D. Edwall, R. E. DeWames, P. S. Wijewarnasuriya, J. M. Arias, S. Sivananthan, M. A. Berding, and A. Sher, “MBE growth and characterization of in situ arsenic doped HgCdTe,” J. Electron. Mater. 27, 595 (1998). 67. M. A. Berding, A. Sher, M. van Schilfgaarde, A. C. Chen, and J. Arias, “Modeling of arsenic activation in HgCdTe,” J. Electron. Mater. 27, 605 (1998). 65. M. A. Berding and A. Sher, “Arsenic deactivation in silicon,” Materials Research Society Symposium Proceedings Vol. 490, Semiconductor Process and Device Performance Modeling, Ed. S. T. Dunham and J. S. Nelson, 9 (1998). 64. M. A. Berding and A. Sher, “Dopants in HgCdTe,” Materials Research Society Symposium Proceedings Vol. 484, Infrared Applications of Semiconductors II, Ed. D.L. McDaniel, M.O. Manasreh, R. H. Miles, and S. Sivananthan, 341 (1998). 63. M. A. Berding, A. Sher, M. van Schilfgaarde, P. M. Rousseau, and W. E. Spicer, “Deactivation in heavily arsenic-doped silicon,” Appl. Phys. Lett. 72, 1492 (1998). 62. Sher, M. van Schilfgaarde, and M. A. Berding, “Computational materials science: an increasingly reliable engineering tool (example: defects in HgCdTe alloys),” Proceedings of Photonics West, SPIE, Vol. 3287 (1998). 61. M. A. Berding, A. Sher, M. van Schilfgaarde, “Group-IV semiconductor compounds,” Phys. Rev. B 56, 3885 (1997). 60. M. A. Berding, A. Sher, M. van Schilfgaarde, M. J. Antonell, and C. R. Abernathy, “Thermodynamical properties of thallium-based III-V materials,” J. Electron. Mater. 26, 683 (1997). 59. M. J. Antonell, C. R. Abernathy, A. Sher, M. Berding and M. van Schilfgaarde, “Growth of thallium-containing III-V materials by gas-source molecular beam epitaxy,” (ECS 1999). 57. A. Sher, M. A. Berding, S. Krishnamurthy, M. van Schilfgaarde, “Alloys for infrared applications,” Anales de la Asociacion Quimica Argentina 84, 23 (1996). 56. M. A. Berding, A. Sher, M. van Schilfgaarde, “Ab-initio calculations of CxSi 1-x-y Gey compounds for silicon--based heterojunction devices,” Mat. Res. Soc. Symp. Proc. Vol. 405, 93 (1996). 55. M. A. Berding, A. Sher, M. van Schilfgaarde, “Native point defect densities and dark line defects in ZnSe,” Mat. Res. Soc. Symp. Proc. Vol. 408, 503 (1996). 54. Sher, M. van Schilfgaarde, S. Krishnamurthy, and M. A. Berding, “Theoretical evaluation of InTlP, InTlAs, and InTlSb as long-wave infrared detectors,” J. Electron. Mater. 24, 1119 (1995). 53. M. A. Berding, M. van Schilfgaarde, and A. Sher, “Defect modeling studies in HgCdTe and CdTe,” J. Electron. Mater. 24, 1127 (1995). 52. M. A. Berding, M. van Schilfgaarde, and A. Sher, “First-principles calculation of native defect densities in Hg0.8Cd0.2Te,” Phys. Rev. B 50, 1519 (1994). 50. M. A. Berding, M. van Schilfgaarde, and A. Sher, “Hg0.8Cd0.2Te native defects: densities and dopant properties,” J. Electron. Mater. 22, 1005 (1993). 49. M. A. Berding, M. van Schilfgaarde, and A. Sher, “Defect equilibrium in HgTe,” J. Vac. Sci. Technol. B 10, 1471 (1992). 48. S. Krishnamurthy, M. A. Berding, A. Sher, and A.-B. Chen, “Surface energies and order-state: Effects on semiconductor growth,” in Computer Aided Innovation of New Materials, ed. M. Doyama, T. Suzuki, J. Kihara, and R. Yammamota (Elsevier Science Pub., North Holland, 1991). 47. Sher, M. A. Berding, M. van Schilfgaarde and A.-B. Chen, “HgCdTe status review with emphasis on correlations, native defects and diffusion,” Semicond. Sci. Technol. 6, C59 (1991). 46. M. A. Berding, S. Krishnamurthy, and A. Sher, “Surface energies for MBE growth of HgTe and CdTe,” J. Vac. Sci. Technol. B 9, 1858 (1991). 45. M. A. Berding, A. Sher, and A.-B. Chen, “Hg1-xCdxTe: Defect structure overview,” Mat. Res. Soc. Symp. Proc. Vol. 216, 3 (1991). 44. S. Krishnamurthy, M. A. Berding. A. Sher, and A.-B. Chen, “Epitaxially grown semiconductor surfaces,” J. Cryst. Growth 109, 88 (1991). 43. A. Sher, M. van Schilfgaarde, and M. A. Berding, “Review of the status of computational solid-state physics,” J. Vac. Sci. Technol. B 9, 1738 (1991). 42. A.-B. Chen, Y.-M. Lai-Hsu, S. Krishnamurthy, M. A. Berding and A. Sher, “Band structures of HgCdTe and HgZnTe alloys and superlattices,” Semicond. Sci. Technol. 5, S100 (1990). 41. M. A. Berding, A. Sher, A.-B. Chen and R. Patrick, “Vacancies and surface segregation in HgCdTe and HgZnTe,” Semicond. Sci. Technol. 5, S86 (1990). 40. M. A. Berding, M. van Schilfgaarde, A.T. Paxton, and A. Sher, “Defects in ZnTe, CdTe and HgTe: Total energy calculations,” J. Vac. Sci. and Technol. A 8, 1103 (1990). 38. S. Krishnamurthy, M. A. Berding, A. Sher, and A.-B. Chen, “Semiconductor surface sublimation energies and atom-atom interactions,” Phys. Rev. Lett. 64, 2531 (1990). 35. S. Krishnamurthy, M. A. Berding, A. Sher, and A.-B. Chen, “Surface roughness theory and low-temperature epitaxy,” Mat. Res. Soc. Symp. Proc. Vol. 161, 291 (1990). 34. R. S.Patrick, A.-B. Chen, A. Sher, and M. A. Berding, “Surface segregation in pseudobinary alloys,” Phys. Rev. B 39, 5980 (1989). 33. A. Sher, M. A. Berding, A.-B. Chen, and R. Patrick, “Correlations and alloy properties: growth, vacancies, surface segregation,” J. Cryst. Growth 98, 27 (1989). 32. S. Krishnamurthy, M. A. Berding, A. Sher, A.-B. Chen, “Systematics of chemical and structural disorder on band-edge properties of semiconductor alloys,” Phys. Rev. B 37, 4254 (1988). 31. M. A. Berding, S. Krishnamurthy, A. Sher, A.-B. Chen, “Ballistic transport in II-VI semiconductor compounds and alloys,” J. Cryst. Growth 86, 33 (1988). 30. A.-B. Chen, A. Sher and M. A. Berding, “Semiconductor alloy theory: Internal strain energy and bulk modulus,” Phys. Rev. B 37, 6285 (1988). 28. R. S. Patrick, A.-B. Chen, A. Sher, and M. A. Berding, “Phase diagrams and microscopic structures of (Hg,Cd)Te, (Hg,Zn)Te, and Cd,Zn)Te,” J. Vac. Sci. Technol. A 6, 2643 (1988). 26. A. Sher, M. A. Berding, M. van Schilfgaarde, A.-B. Chen, and R.Patrick, “Modeling of Mechanical Properties of II-VI Materials,” J. Cryst. Growth 86, 15 (1988). 25. M. A. Berding, A. Sher, A.-B. Chen, “Polarity in semiconductor compounds,” Phys. Rev. B 36, 7433 (1987). 24. A. Sher, M. vanSchilfgaarde, A.-B. Chen, and M. A. Berding, “Fracture and Hardness of semiconductor alloys,” DATALOG, an SRI International publication of the Buisness Intelligence Program. 23. M. A. Berding, A. Sher, and A.-B. Chen, “Vacancy formation energies in II-VI Semiconductors,” J. Vac. Sci. Technol. A 5, 3009 (1987). 22. M. A. Berding, S. Krishnamurthy, A. Sher, and A.-B. Chen, “Electronic and transport properties of HgCdTe and HgZnTe,” J. Vac. Sci. and Technol. A 5, 3014 (1987). 21. C. K. Shih, J. A. Silberman, A. K. Wahi, G. P. Carey, I. Lindau, W. E. Spicer, M. A. Berding, and A. Sher, “Angle resolved photoemission study of the alloy scattering effect in Hg1-xCdxTe,” J. Vac. Sci. and Technol. A 5, 3026 (1987). 20. A. Sher, M. A. Berding, S. Krishnamurthy, M. van Shilfgaarde, A.-B. Chen, and W. Chen, “Structure-property relationships in semiconductor alloys,” Mat. Res. Soc. Symp. Proc. Vol. 90, 91 (1987). 19. M. A. Berding, A. Sher, and A.-B. Chen, “HgCdTe versus HgZnTe: Electronic properties and vacancy formation energies,” Mat. Res. Soc. Symp. Proc. Vol. 90, 127 (1987). 18. Sher, A.-B. Chen, M. van Schilfgaarde, and M. A. Berding, “Semiconductor Alloys: Structural Property Engineering,” Proc. 1st International SAMPE Electronics Conference, Sunnyvale, California, p.323 (23-25 June 1987). 17. A.-B. Chen, M. van Schilfgaarde, S. Krishnamurthy, M. A. Berding, and A. Sher, “Alloy electronic structure and Statistics,” Proceedings of the 1986 7th International Conference onTernary and Multinary Compounds (10-12 September Snowmass, Colorado). 16. T. Smith, J.E. Penner-Hahn, K.O. Hodgson, M. A. Berding, and S. Doniach, “Polarized Cu K-Edge Studies,” in “EXAFS and Near Edge Structure III,” ed. K.O. Hodgson, B. Hedman, adn J.E. Penner-Hahn, Springer-Verlag, Berlin-Heidelberg, p.38,(1984). 15. M. A. Berding, “Calculation of Cu K-Edge Photoabsorption Spectra using an Extended Continuum Multiple Scattered Wave Method,” PhD Dissertation, Stanford University, Dept. of Applied Physics (1985). 14. S. Doniach, M. A. Berding, T. Smith, and K.O. Hodgson, “Theory of X-Ray Absorption Edge Spectra,” in ``EXAFS and Near Edge Structure III,” ed. K.O.Hodgson, B. Hedman, adn J.E. Penner-Hahn, Springer-Verlag, Berlin-Heidelberg, p.38, (1984). 13. MSS/IRIS proceedings: 12. S. Krishnamurthy, Z.G. Yu, M. A. Berding, C. H. Swartz, T. H. Myers, and D. D. Edwall, “Minority carrier lifetimes in p-doped MWIR HgCdTe alloys,” 2005 Materials Meeting. 11. M. Berding, S. Krishnamurthy, A.-B. Chen, C. H. Swartz, T. H. Myers, D. D. Edwall, and R. DeWames, “SRH lifetimes in HgCdTe,” 2004 Materials Meeting. 10. D. Edwall, E. Piquette, J. Ellsworth, J. Arias, C. H. Swartz, L. Bai, N. C. Giles, T. H. Myers, M. A. Berding, “Recent Advances in Arsenic and Indium-Doped MBE HgCdTe,” 2003 Materials Meeting. 9. M.A. Berding and A. Sher, “Strategies for arsenic doping of HgCdTe during MBE,” July 1998 IRIS Materials Meeting. 8. A. Sher and M.A. Berding, “Theory of crosshatch in HgCdTe,” July 1998 IRIS Materials Meeting. 7. M. A. Berding and A. Sher, “Bothersome impurities in LWIR HgCdTe,” July 1997 IRIS Materials Meeting. 6. M. A. Berding and A. Sher, “Arsenic activation in MBE-grown HgCdTe,” July 1997 IRIS Materials Meeting. 5. M. W. Muller, A. T. Paxton, A. Sher, M. A. Berding and M. van Schilfgaarde, “Dislocation and junction performance in MCT,” August 1993 IRIS Materials Meeting. 4. A. Sher, M. van Schilfgaarde, M. A. Berding, J. M. MacCallum, A.-B. Chen, “InTlSb as an LWIR Material,” July 1992 IRIS Materials Meeting. 3. M. A. Berding, A. Sher, and M. van Schilfgaarde, “ Native defect equilibrium in HgZnTe and HgCdTe,” August 1992 IRIS Materials Meetings. 2. M. A. Berding, S. Krishnamurthy, and A. Sher, “Energetics for vapor phase growth models of HgCdTe,” August 1990 IRIS Materials Meeting.
1. A. Sher, M. A. Berding, R. S. Patrick, and A.-B. Chen, “On passivation of Hg1-xCdxTe and Hg1-xZnxTe,” September 1989 IRIS Materials Meeting.
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